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Title: Anomalous Hall effect in epitaxial permalloy thin films

Anomalous Hall effect (AHE) of epitaxial permalloy thin films grown on MgO (001) substrates is investigated. The longitudinal conductivity independent term (i.e., the sum of intrinsic and side-jump contributions) of the anomalous Hall conductivity (AHC) is found to be much smaller than those of Fe and Ni films. Band theoretical calculations of the intrinsic AHC as a function of the number of valence electrons (band filling) indicate that the AHC of the permalloy is in the vicinity of sign change, thus resulting in the smallness of the intrinsic AHC. The contribution of the phonon scattering is found to be comparable to that of the impurity scattering. This work suggests that the permalloy films are ideal systems to understand the AHE mechanisms induced by impurity scattering.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Shanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)
  2. Department of Physics and Center for Theoretical Sciences, National Taiwan University, Taipei 10617, Taiwan (China)
Publication Date:
OSTI Identifier:
22217879
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC CONDUCTIVITY; EPITAXY; HALL EFFECT; IMPURITIES; MAGNESIUM OXIDES; PERMALLOY; PHONONS; SCATTERING; SPUTTERING; SUBSTRATES; THIN FILMS; VALENCE