Analysis of electronic structure of amorphous InGaZnO/SiO{sub 2} interface by angle-resolved X-ray photoelectron spectroscopy

Journal Article · Mon Oct 28 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4828869· OSTI ID:22217878

Ueoka, Y.; Ishikawa, Y.; Maejima, N.; Matsui, F.; Matsui, H.; Yamazaki, H.; Urakawa, S.; Horita, M.; Daimon, H.; Uraoka, Y. ^[1]

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1. Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan)

The electronic structures of amorphous indium gallium zinc oxide (a-IGZO) on a SiO{sub 2} layers before and after annealing were observed by constant final state X-ray photoelectron spectroscopy (CFS-XPS) and X-ray adsorption near-edge structure spectroscopy (XANES). From the results of angle-resolved CFS-XPS, the change in the electronic state was clearly observed in the a-IGZO bulk rather than in the a-IGZO/SiO{sub 2} interface. This suggests that the electronic structures of the a-IGZO bulk strongly affected the thin-film transistor characteristics. The results of XANES indicated an increase in the number of tail states upon atmospheric annealing (AT). We consider that the increase in the number of tail states decreased the channel mobility of AT samples.

• OSTI ID: 22217878
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ABSORPTION SPECTROSCOPY
ADSORPTION
ANNEALING
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM
INDIUM
INTERFACES
LAYERS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
THIN FILMS
TRANSISTORS
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY
X-RAY SPECTROSCOPY
ZINC OXIDES