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Title: Surface InP/In{sub 0.48}Ga{sub 0.52}P quantum dots: Carrier recombination dynamics and their interaction with fluorescent dyes

We describe the properties and carrier dynamics of surface InP quantum dots (QDs) on In{sub 0.48}Ga{sub 0.52}P, lattice-matched to GaAs (100). The structures were grown using gas-source molecular beam epitaxy. The average height and lateral size of the dots are in the range of 2–6 and 30–50 nm, respectively. The photoluminescence of the surface dots peaks between 750 and 830 nm, depending on the growth conditions, and is red-shifted compared to the emission of the capped QDs grown under similar conditions. The integrated photoluminescence intensity is comparable to that of the capped QDs. The decay time of both surface and capped QDs is around 1 ns at 15 K. The strong luminescence of surface QDs is explained by the effect of acting vacuum/air as an effective barrier and saturated surface states. Enhancement of the QDs luminescence is observed for the samples coated with a fluorescent dye.
Authors:
 [1] ;  [2] ;  [3] ; ; ; ; ;  [1] ;  [4]
  1. Institute of Physics, Humboldt–University Berlin, 12489 Berlin (Germany)
  2. (Germany)
  3. (France)
  4. Max Born Institute for Nonlinear Optics and Ultrafast Spectroscopy, 2A Max–Born–Str., 12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22217875
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AIR; CARRIERS; COMPARATIVE EVALUATIONS; DYES; FLUORESCENCE; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; RECOMBINATION; RED SHIFT; SEMICONDUCTOR MATERIALS; SURFACES