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Title: p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 °C to 600 °C and then annealed in situ at 800 °C under vacuum (pressure ∼5 × 10{sup −8} mbar). Films grown for temperature range of 200–500 °C showed p-type conduction with hole concentration of 1.374 × 10{sup 16} to 5.538 × 10{sup 16} cm{sup −3}, resistivity of 66.733–12.758 Ω cm, and carrier mobility of 4.964–8.846 cm{sup 2} V{sup −1} s{sup −1} at room temperature. However, the film grown at 600 °C showed n-type behavior. Additionally, current-voltage (I–V) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of Sb{sub Zn}–2V{sub Zn} complex caused acceptor-like behavior in SZO films.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Hybrid Nanodevice Research Group, Discipline of Electrical Engineering, Indian Institute of Technology, Indore 453441 (India)
  2. University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore (India)
Publication Date:
OSTI Identifier:
22217872
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CARRIER MOBILITY; DOPED MATERIALS; HETEROJUNCTIONS; ION BEAMS; OXYGEN; SAPPHIRE; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES