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Title: Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.
Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [2] ;  [3] ;  [2] ;  [4] ;  [5] ;  [6] ; ;  [3] ; ; ;  [7] ;  [1]
  1. Department of Electronics Engineering, Chungnam National University, Daejeon (Korea, Republic of)
  2. (United States)
  3. SEMATECH, 2706 Montopolis Dr., Austin, Texas 78741 (United States)
  4. Texas A and M University College Station, Texas 77843 (United States)
  5. Texas State University, 601 University Drive, San Marcos, Texas 78666 (United States)
  6. Yonsei University, Incheon, 406-840 (Korea, Republic of)
  7. The University of Texas, Austin, Texas 78758 (United States)
Publication Date:
OSTI Identifier:
22217836
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ALUMINIUM OXIDES; BERYLLIUM OXIDES; BOND LENGTHS; CHEMISTRY; CLEANING; COMPARATIVE EVALUATIONS; CONFIGURATION; DENSITY; EQUIPMENT; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; LEAKAGE CURRENT; METALS; MOSFET; REACTION HEAT; SEMICONDUCTOR MATERIALS; X-RAY PHOTOELECTRON SPECTROSCOPY