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Title: Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.
Authors:
 [1] ;  [1] ;  [2] ;  [3]
  1. Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States)
  2. (United States)
  3. Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)
Publication Date:
OSTI Identifier:
22217835
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINATES; CONCENTRATION RATIO; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ELECTRON CORRELATION; EPITAXY; FERMI GAS; LANTHANUM COMPOUNDS; PULSES; STRONTIUM COMPOUNDS; SUBSTRATES; THIN FILMS; TITANIUM COMPOUNDS; VANADIUM