skip to main content

Title: Epitaxial growth of europium monoxide on diamond

We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖[100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.
Authors:
;  [1] ; ;  [2] ; ; ;  [3] ;  [4] ; ;  [5] ;  [1] ;  [6]
  1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
  2. Zentrum für elektronische Korrelationen und Magnetismus, Universität Augsburg, Universitätsstraße 1, 86159 Augsburg (Germany)
  3. Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany)
  4. Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637 (United States)
  5. Peter Grünberg Institute, PGI9-IT, JARA-FIT, Research Centre Jülich, D-52425 Jülich (Germany)
  6. (United States)
Publication Date:
OSTI Identifier:
22217833
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIAMONDS; EUROPIUM; EUROPIUM IONS; EUROPIUM OXIDES; FERROMAGNETIC MATERIALS; FILMS; LAYERS; MAGNETIZATION; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; ORIENTATION; SATURATION; SILICON; TRANSITION TEMPERATURE