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Title: Optical properties of single ZnTe nanowires grown at low temperature

Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature (350 °C) under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per μm{sup 2}). The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.
Authors:
; ; ; ; ; ; ; ; ; ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ; ;  [3]
  1. Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France)
  2. (France)
  3. INAC, CEA and Université de Grenoble, 17 rue des Martyrs, 38054 Grenoble (France)
Publication Date:
OSTI Identifier:
22217832
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CATHODOLUMINESCENCE; DENSITY; EXCITONS; FABRICATION; GOLD; LAYERS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OXIDES; PHOTOLUMINESCENCE; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT; STRAINS; TEMPERATURE RANGE 0065-0273 K; TRANSMISSION ELECTRON MICROSCOPY; WIRES; ZINC SULFIDES; ZINC TELLURIDES