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Title: Enhanced light scattering in Si nanostructures produced by pulsed laser irradiation

An innovative method for Si nanostructures (NS) fabrication is proposed, through nanosecond laser irradiation (λ = 532 nm) of thin Si film (120 nm) on quartz. Varying the laser energy fluences (425–1130 mJ/cm{sup 2}) distinct morphologies of Si NS appear, going from interconnected structures to isolated clusters. Film breaking occurs through a laser-induced dewetting process. Raman scattering is enhanced in all the obtained Si NS, with the largest enhancement in interconnected Si structures, pointing out an increased trapping of light due to multiple scattering. The reported method is fast, scalable and cheap, and can be applied for light management in photovoltaics.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2]
  1. MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy)
  2. IMM-CNR, VIII strada 5, 95121 Catania (Italy)
Publication Date:
OSTI Identifier:
22217831
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BEAMS; FABRICATION; LASER RADIATION; LASERS; LIGHT SCATTERING; MORPHOLOGY; MULTIPLE SCATTERING; NANOSTRUCTURES; PHOTOVOLTAIC EFFECT; PULSES; QUARTZ; RAMAN EFFECT; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS; TRAPPING; VISIBLE RADIATION