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Title: Impact of N{sub 2} and forming gas plasma exposure on the growth and interfacial characteristics of Al{sub 2}O{sub 3} on AlGaN

The interface and atomic layer deposition (ALD) of Al{sub 2}O{sub 3} on the annealed, N{sub 2} plasma and forming gas (N{sub 2}:H{sub 2}) exposed Al{sub 0.25}Ga{sub 0.75}N surface was studied using in situ X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. Exposure of the Al{sub 0.25}Ga{sub 0.75}N surface to the plasma treatments is able to remove spurious carbon, and readily facilitate uniform ALD Al{sub 2}O{sub 3} nucleation.
Authors:
; ; ; ; ;  [1]
  1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
Publication Date:
OSTI Identifier:
22217830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ANNEALING; CARBON; HYDROGEN; INTERFACES; NUCLEATION; PLASMA; PROCESSING; SCATTERING; SEMICONDUCTOR MATERIALS; SURFACE TREATMENTS; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY