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Title: Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 × 10{sup −5} cm{sup −1}, and the length of SFs is less than 15 nm.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [2] ;  [2] ;  [2]
  1. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)
  2. (United States)
  3. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  4. Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)
Publication Date:
OSTI Identifier:
22217817
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; APPROXIMATIONS; DENSITY; DISLOCATIONS; GALLIUM NITRIDES; METALS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NITROGEN; NUCLEATION; PLASMA; RESOLUTION; SEMICONDUCTOR MATERIALS; STACKING FAULTS; SUBSTRATES; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY