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Title: Growth direction of oblique angle electron beam deposited silicon monoxide thin films identified by optical second-harmonic generation

Oblique angle deposited (OAD) silicon monoxide (SiO) thin films forming tilted columnar structures have been characterized by second-harmonic generation. It was found that OAD SiO leads to a rotationally anisotropic second-harmonic response, depending on the optical angle of incidence. A model for the observed dependence of the second-harmonic signal on optical angle of incidence allows extraction of the growth direction of OAD films. The optically determined growth directions show convincing agreement with cross-sectional scanning electron microscopy images. In addition to a powerful characterization tool, these results demonstrate the possibilities for designing nonlinear optical devices through SiO OAD.
Authors:
; ;  [1]
  1. Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg Øst (Denmark)
Publication Date:
OSTI Identifier:
22217815
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; DEPOSITION; DESIGN; ELECTRON BEAMS; HARMONIC GENERATION; IMAGES; INCIDENCE ANGLE; NONLINEAR PROBLEMS; SCANNING ELECTRON MICROSCOPY; SIGNALS; SILICON; SILICON OXIDES; THIN FILMS