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Title: Confined phase separation in SiO{sub X} nanometric thin layers

Phase separation in silicon-rich silica/silica multilayers was investigated using Atom Probe Tomography and Atomistic Kinetic Monte Carlo simulation. It is shown that the thickness of silicon-rich silicon oxide sublayers plays an important role during phase transformation. It determines the morphology of Si-rich phase formed after subsequent annealing, which is of prime interest for microelectronic and optoelectronic applications. Monte Carlo simulation reveals that the formation of isolated Si clusters can be achieved even in the case of spinodal decomposition and is directly related to the ratio between the spinodal wavelength and the sublayer thickness.
Authors:
; ; ;  [1] ; ;  [2]
  1. Groupe de Physique des Matériaux (GPM) UMR 6634, Normandie Université, Université et INSA de Rouen-CNRS, Av. de l’Université, BP 12, 76801 Saint Etienne du Rouvray (France)
  2. Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), CEA/CNRS/ENSICAEN/UCBN, 6 Bd. Maréchal Juin, 14050 Caen Cedex 4 (France)
Publication Date:
OSTI Identifier:
22217813
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; ATOMIC FORCE MICROSCOPY; COMPUTERIZED SIMULATION; DECOMPOSITION; LAYERS; METALS; MONTE CARLO METHOD; MORPHOLOGY; NANOSTRUCTURES; PHASE TRANSFORMATIONS; SILICA; SILICON; SILICON OXIDES; THICKNESS; THIN FILMS; TOMOGRAPHY