Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

Journal Article · Mon Nov 11 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4830044· OSTI ID:22217812

Chen, Yen-Ting ^[1]; Araki, Tsutomu ^[2]; Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens ^[3]; Chen, Li-Chyong ^[4]; Chen, Kuei-Hsien ^[1]; Nanishi, Yasushi ^[5]

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1. Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China)
2. Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan)
3. Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden)
4. Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China)
5. Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)

Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm.

• OSTI ID: 22217812
• Journal Information: Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CATALYSTS
CONTROL
FABRICATION
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NUCLEATION
SEMICONDUCTOR MATERIALS