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Title: Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
  2. School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China)
  3. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)
  4. GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)
Publication Date:
OSTI Identifier:
22217808
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRONS; GALLIUM; INDIUM; MATERIALS RECOVERY; SEMICONDUCTOR MATERIALS; THIN FILMS; TRANSISTORS; ULTRAVIOLET RADIATION; ZINC OXIDES