Gate-controlled ultraviolet photo-etching of graphene edges

Journal Article · Mon Nov 11 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4830226· OSTI ID:22217806

Mitoma, Nobuhiko; Nouchi, Ryo ^[1]

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1. Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)

The chemical reactivity of graphene under ultraviolet (UV) light irradiation is investigated under positive and negative gate electric fields. Graphene edges are selectively etched when negative gate voltages are applied while the reactivity is significantly suppressed for positive gate voltages. Oxygen adsorption onto graphene is significantly affected by the Fermi level of the final state achieved during previous electrical measurements. UV irradiation after negative-to-positive gate sweeps causes predominant oxygen desorption while UV irradiation after gate sweeps in the opposite direction causes etching of graphene edges.

• OSTI ID: 22217806
• Journal Information: Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
DESORPTION
ELECTRIC POTENTIAL
ETCHING
FERMI LEVEL
GRAPHENE
IRRADIATION
OXYGEN
REACTIVITY
ULTRAVIOLET RADIATION