skip to main content

SciTech ConnectSciTech Connect

Title: Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.
Authors:
; ; ;  [1] ;  [2] ;  [1] ;  [2]
  1. Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22217803
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CADMIUM TELLURIDES; GALLIUM ARSENIDES; INDIUM ANTIMONIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLYCRYSTALS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SOLAR CELLS; STEADY-STATE CONDITIONS; SUBSTRATES; SURFACES; THIN FILMS; TIME RESOLUTION