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Title: Self-assembly of compositionally modulated Ga{sub 1−x}Mn{sub x}As multilayers during molecular beam epitaxy

GaMnAs structures were grown on GaAs(100) substrates by molecular beam epitaxy employing different growth parameters. We studied manganese incorporation employing secondary ion mass spectrometry (SIMS). At a growth temperature of 300 °C, we observed a self-assembled modulation of the manganese concentration. SIMS depth profiles were analyzed employing a depth resolution function taking into account sputtering-induced broadening of the original distribution and segregation. We found a Mn segregation length along the growth direction of ∼4 nm. The presence of GaMnAs multilayers was corroborated by high-resolution x-ray diffraction. Spinodal decomposition is a possible mechanism for the spontaneous formation of the multilayer structure.
Authors:
; ; ;  [1] ; ;  [2] ;  [3]
  1. Physics Department, Centro de Investigación y de Estudios Avanzados del IPN, Apartado 14470, D.F. Mexico (Mexico)
  2. Electrical Engineer Department-SEES, Centro de Investigación y de Estudios Avanzados del IPN, Apartado 14470, D.F. Mexico (Mexico)
  3. Instituto de Física, USP, CP 66318, 05315-970 Sao Paulo, SP (Brazil)
Publication Date:
OSTI Identifier:
22217799
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; DECOMPOSITION; DEPTH; GALLIUM ARSENIDES; ION MICROPROBE ANALYSIS; LAYERS; MANGANESE; MASS SPECTRA; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; RESOLUTION; SEGREGATION; SEMICONDUCTOR MATERIALS; SPUTTERING; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY