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Title: Experimental demonstration of mode-selective phonon excitation of 6H-SiC by a mid-infrared laser with anti-Stokes Raman scattering spectroscopy

Mode-selective phonon excitation by a mid-infrared laser (MIR-FEL) is demonstrated via anti-Stokes Raman scattering measurements of 6H-silicon carbide (SiC). Irradiation of SiC with MIR-FEL and a Nd-YAG laser at 14 K produced a peak where the Raman shift corresponds to a photon energy of 119 meV (10.4 μm). This phenomenon is induced by mode-selective phonon excitation through the irradiation of MIR-FEL, whose photon energy corresponds to the photon-absorption of a particular phonon mode.
Authors:
; ; ; ; ; ;  [1] ;  [2] ; ; ; ; ;  [3]
  1. Graduate School of Energy Science, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)
  2. Kyoto University Research Administration Office, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)
  3. Institute of Advanced Energy, Kyoto University, Gokasyo, Uji, Kyoto 611-0011 (Japan)
Publication Date:
OSTI Identifier:
22217793
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; BEAMS; EXCITATION; HYDROGEN 6; IRRADIATION; MEV RANGE 100-1000; NEODYMIUM LASERS; PEAKS; PHONONS; PHOTONS; RAMAN EFFECT; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SPECTROSCOPY