Experimental demonstration of mode-selective phonon excitation of 6H-SiC by a mid-infrared laser with anti-Stokes Raman scattering spectroscopy

Journal Article · Mon Oct 28 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4827253· OSTI ID:22217793

Yoshida, Kyohei; Hachiya, Kan; Okumura, Kensuke; Mishima, Kenta; Inukai, Motoharu; Torgasin, Konstantin; Omer, Mohamed ^[1]; Sonobe, Taro ^[2]; Zen, Heishun; Negm, Hani; Kii, Toshiteru; Masuda, Kai; Ohgaki, Hideaki ^[3]

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1. Graduate School of Energy Science, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)
2. Kyoto University Research Administration Office, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)
3. Institute of Advanced Energy, Kyoto University, Gokasyo, Uji, Kyoto 611-0011 (Japan)

Mode-selective phonon excitation by a mid-infrared laser (MIR-FEL) is demonstrated via anti-Stokes Raman scattering measurements of 6H-silicon carbide (SiC). Irradiation of SiC with MIR-FEL and a Nd-YAG laser at 14 K produced a peak where the Raman shift corresponds to a photon energy of 119 meV (10.4 μm). This phenomenon is induced by mode-selective phonon excitation through the irradiation of MIR-FEL, whose photon energy corresponds to the photon-absorption of a particular phonon mode.

• OSTI ID: 22217793
• Journal Information: Applied Physics Letters, Vol. 103, Issue 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
BEAMS
EXCITATION
HYDROGEN 6
IRRADIATION
MEV RANGE 100-1000
NEODYMIUM LASERS
PEAKS
PHONONS
PHOTONS
RAMAN EFFECT
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SPECTROSCOPY