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Title: The role of carbon in ion beam nano-patterning of silicon

We report a comparative study of nano-pattern formations on a carbon film and a smooth Si(100) surface following inert and chemically active ion bombardment. For the case of carbon film, patterns could be formed both by inert (Ar{sup +}) and self (C{sup +}) ion bombardment with the former producing ripples at relatively lower fluence. In contrast, bombardment by inert Ar{sup +} failed to form the nano patterns on Si surface, while bombardment by the same energy C{sup +} generated the ripples. Thus, impurity induced chemical effect seems to be crucial rather than the Bradley-Harper or Carter-Vishnyakov effects for destabilizing the surface for ripple formation.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [3]
  1. Variable Energy Cyclotron Center, I/AF, Bidhannagar, Kolkata 700064 (India)
  2. (India)
  3. UGC-DAE Consortium for Scientific Research, III/LB-8, Saltlake, Kolkata 700098 (India)
Publication Date:
OSTI Identifier:
22217791
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ARGON IONS; CARBON; CARBON IONS; FILMS; IMPURITIES; ION BEAMS; NANOSTRUCTURES; SILICON; SURFACES