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Title: Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

We report on Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si(111) substrate. First, Si(111) substrate is patterned, and then metalorganic chemical vapor deposition is implemented for a fully-coalesced ∼8.5 μm AlN template layer via a pulsed atomic layer epitaxial growth technique. A back-illuminated p-i-n PD structure is subsequently grown on the high quality AlN template layer. After processing and implementation of Si(111) substrate removal, the optical and electrical characteristic of PDs are studied. Solar-blind operation is observed throughout the array; at the peak detection wavelength of 290 nm, 625 μm{sup 2} area PD showed unbiased peak external quantum efficiency and responsivity of ∼7% and 18.3 mA/W, respectively, with a UV and visible rejection ratio of more than three orders of magnitude. Electrical measurements yielded a low-dark current density below 1.6 × 10{sup −8} A/cm{sup 2} at 10 V reverse bias.
Authors:
; ; ; ;  [1]
  1. Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
Publication Date:
OSTI Identifier:
22217790
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DETECTION; EPITAXY; GALLIUM COMPOUNDS; LAYERS; PEAKS; PHOTODETECTORS; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS; SUBSTRATES; ULTRAVIOLET RADIATION