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Title: Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In{sub 0.3}Ga{sub 0.7}N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In{sub 0.3}Ga{sub 0.7}N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)
  2. Department of Electrical and Computer Engineering, University of Michigan-Dearborn, Dearborn, Michigan 48128 (United States)
  3. Microsystems Engineering, Rochester Institute of Technology, Rochester, New York 14623 (United States)
  4. Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22217789
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; EMISSION; GALLIUM NITRIDES; MIRRORS; MOLECULAR BEAM EPITAXY; PEAKS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SILICON; SPECTRAL SHIFT; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; WAVELENGTHS