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Title: In-growth of an electrically active defect in high-purity silicon after proton irradiation

Defect-related energy levels in the lower half of the band gap of silicon have been studied with transient-capacitance techniques in high-purity, carbon and oxygen lean, plasma-enhanced chemical-vapor deposition grown, n-and p-type silicon layers after 2-MeV proton irradiations at temperatures at or just below room temperature. The in-growth of a distinct line in deep-level transient spectroscopy spectra, corresponding to a level in the band gap at E{sub V} + 0.357 eV where E{sub V} is the energy of the valence band edge, takes place for anneal temperatures at around room temperature with an activation energy of 0.95 ± 0.08 eV. The line disappears at an anneal temperature of around 450 K. The corresponding defect is demonstrated not to contain boron, carbon, oxygen, or phosphorus. Possible defect candidates are discussed.
Authors:
; ;  [1] ;  [2] ; ;  [3]
  1. Department of Physics and Astronomy, and Interdisciplinary Nanoscience Center, Aarhus University, Aarhus (Denmark)
  2. CNR-IMM, Institute of Microelectronics and Microsystems, Catania (Italy)
  3. IM2NP, CNRS (UMR 7334) and Université Aix-Marseille, 13397 Marseille Cedex 20 (France)
Publication Date:
OSTI Identifier:
22217779
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ANNEALING; BORON; CAPACITANCE; CARBON; CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY LEVELS; IMPURITIES; IRRADIATION; LAYERS; MEV RANGE; OXYGEN; PHOSPHORUS; PROTONS; SEMICONDUCTOR MATERIALS; SILICON; SPECTRA; TEMPERATURE RANGE 0273-0400 K