In-growth of an electrically active defect in high-purity silicon after proton irradiation

Journal Article · Sat Dec 14 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4841175· OSTI ID:22217779

Nylandsted Larsen, A.; Juul Pedersen, H.; Christian Petersen, M. ^[1]; Privitera, V. ^[2]; Gurimskaya, Y.; Mesli, A. ^[3]

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1. Department of Physics and Astronomy, and Interdisciplinary Nanoscience Center, Aarhus University, Aarhus (Denmark)
2. CNR-IMM, Institute of Microelectronics and Microsystems, Catania (Italy)
3. IM2NP, CNRS (UMR 7334) and Université Aix-Marseille, 13397 Marseille Cedex 20 (France)

Defect-related energy levels in the lower half of the band gap of silicon have been studied with transient-capacitance techniques in high-purity, carbon and oxygen lean, plasma-enhanced chemical-vapor deposition grown, n-and p-type silicon layers after 2-MeV proton irradiations at temperatures at or just below room temperature. The in-growth of a distinct line in deep-level transient spectroscopy spectra, corresponding to a level in the band gap at E{sub V} + 0.357 eV where E{sub V} is the energy of the valence band edge, takes place for anneal temperatures at around room temperature with an activation energy of 0.95 ± 0.08 eV. The line disappears at an anneal temperature of around 450 K. The corresponding defect is demonstrated not to contain boron, carbon, oxygen, or phosphorus. Possible defect candidates are discussed.

• OSTI ID: 22217779
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ANNEALING
BORON
CAPACITANCE
CARBON
CHEMICAL VAPOR DEPOSITION
DEEP LEVEL TRANSIENT SPECTROSCOPY
ENERGY LEVELS
IMPURITIES
IRRADIATION
LAYERS
MEV RANGE
OXYGEN
PHOSPHORUS
PROTONS
SEMICONDUCTOR MATERIALS
SILICON
SPECTRA
TEMPERATURE RANGE 0273-0400 K