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Title: Controlled fabrication of Si nanocrystal delta-layers in thin SiO{sub 2} layers by plasma immersion ion implantation for nonvolatile memories

Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO{sub 2} films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories.
Authors:
; ; ;  [1] ; ;  [2] ; ; ;  [3] ; ;  [4]
  1. CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse Cedex 04 (France)
  2. IBS, Rue G Imbert Prolongée, ZI Peynier-Rousset, 13790 Peynier (France)
  3. NCSRD, Terma Patriarchou Gregoriou, 15310 Aghia Paraskevi (Greece)
  4. ICube, 23 Rue du Loess, 67037 Strasbourg Cedex 2 (France)
Publication Date:
OSTI Identifier:
22217766
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ANNEALING; DOSES; EQUIPMENT; FABRICATION; ION IMPLANTATION; LAYERS; NANOSTRUCTURES; PLASMA; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICA; SILICON; SILICON OXIDES; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY