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Title: Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks

We report on the transport properties of an array of N∼30 interconnected Nb nanowires, grown by sputtering on robust porous Si substrates. The analyzed system exhibits a broad resistive transition in zero magnetic field, H, and highly nonlinear V(I) characteristics as a function of H, which can be both consistently described by quantum tunneling of phase slips.
Authors:
; ; ; ;  [1] ;  [2]
  1. CNR-SPIN Salerno and Dipartimento di Fisica “E. R. Caianiello”, Università degli Studi di Salerno, Fisciano I-84084 (Italy)
  2. Belarusian State University of Informatics and Radioelectronics, P. Browka 6, Minsk 220013 (Belarus)
Publication Date:
OSTI Identifier:
22217764
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; CURRENTS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FABRICATION; MAGNETIC FIELDS; NONLINEAR PROBLEMS; POROUS MATERIALS; QUANTUM WIRES; SLIP; SPUTTERING; SUBSTRATES; TUNNEL EFFECT; TYPE-II SUPERCONDUCTORS