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Title: Direct measurement of band offset at the interface between CdS and Cu{sub 2}ZnSnS{sub 4} using hard X-ray photoelectron spectroscopy

We directly and non-destructively measured the valence band offset at the interface between CdS and Cu{sub 2}ZnSnS{sub 4} (CZTS) using hard X-ray photoelectron spectroscopy (HAXPES), which can measure the electron state of the buried interface because of its large analysis depth. These measurements were made using the following real devices; CZTS(t = 700 nm), CdS(t = 100 nm)/CZTS(t = 700 nm), and CdS(t = 5 nm)/CZTS(t = 700 nm) films formed on Mo coated glass. The valence band spectra were measured by HAXPES using an X-ray photon energy of 8 keV. The value of the valence band offset at the interface between CdS and CZTS was estimated as 1.0 eV by fitting the spectra. The conduction band offset could be deduced as 0.0 eV from the obtained valence band offset and the band gap energies of CdS and CZTS.
Authors:
; ; ; ; ; ;  [1]
  1. Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192 (Japan)
Publication Date:
OSTI Identifier:
22217758
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CADMIUM SULFIDES; DEPTH; EV RANGE; GLASS; HARD X RADIATION; INTERFACES; KEV RANGE 01-10; SEMICONDUCTOR MATERIALS; SOCIO-ECONOMIC FACTORS; SPECTRA; THIN FILMS; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY