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Title: Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels

Europium doped gallium nitride (GaN:Eu) is a promising candidate as a material for red light emitting diodes. When Mg was co-doped into GaN:Eu, additional incorporation environments were discovered that show high excitation efficiency at room temperature and have been attributed to the coupling of Mg-H complexes to the majority Eu site. Electron beam irradiation, indirect and resonant (direct) laser excitation were found to modify these complexes, indicating that vibrational energy alone can trigger the migration of the H while the presence of additional charges and excess energy controls the type of reconfiguration and the activation of non-radiative decay channels.
Authors:
;  [1] ;  [2] ; ;  [3]
  1. Lehigh University, 16 Memorial Dr. E, Bethlehem, Pennsylvania 18015 (United States)
  2. Lawrence Livermore National Laboratory, 7000 East Ave L-413, California 94550 (United States)
  3. Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)
Publication Date:
OSTI Identifier:
22217752
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; CONTROL; COUPLING; DOPED MATERIALS; EFFICIENCY; ELECTRON BEAMS; EPITAXY; EUROPIUM; EXCITATION; GALLIUM NITRIDES; HYDROGEN; HYDROGEN COMPLEXES; IRRADIATION; LAYERS; LIGHT EMITTING DIODES; MAGNESIUM; RADIATIVE DECAY; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K