Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels

Journal Article · Mon Dec 09 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4846575· OSTI ID:22217752

Mitchell, B.; Dierolf, V. ^[1]; Lee, D. ^[2]; Lee, D.; Fujiwara, Y. ^[3]

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1. Lehigh University, 16 Memorial Dr. E, Bethlehem, Pennsylvania 18015 (United States)
2. Lawrence Livermore National Laboratory, 7000 East Ave L-413, California 94550 (United States)
3. Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

Europium doped gallium nitride (GaN:Eu) is a promising candidate as a material for red light emitting diodes. When Mg was co-doped into GaN:Eu, additional incorporation environments were discovered that show high excitation efficiency at room temperature and have been attributed to the coupling of Mg-H complexes to the majority Eu site. Electron beam irradiation, indirect and resonant (direct) laser excitation were found to modify these complexes, indicating that vibrational energy alone can trigger the migration of the H while the presence of additional charges and excess energy controls the type of reconfiguration and the activation of non-radiative decay channels.

• OSTI ID: 22217752
• Journal Information: Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE
CONTROL
COUPLING
DOPED MATERIALS
EFFICIENCY
ELECTRON BEAMS
EPITAXY
EUROPIUM
EXCITATION
GALLIUM NITRIDES
HYDROGEN
HYDROGEN COMPLEXES
IRRADIATION
LAYERS
LIGHT EMITTING DIODES
MAGNESIUM
RADIATIVE DECAY
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K