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Title: On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO

The issue of the quantitative analysis of time-resolved photoluminescence experiments is addressed by developing and describing two approaches for determination of unimolecular lifetime, bimolecular recombination coefficient, and equilibrium free-carrier concentration, based on a quite general second-order expression of the electron-hole recombination rate. Application to the case of band-edge emission of ZnO single crystals is reported, evidencing the signature of sub-nanosecond second-order recombination dynamics for optical transitions close to the interband excitation edge. The resulting findings are in good agreement with the model prediction and further confirm the presence, formerly evidenced in literature by non-optical methods, of near-surface conductive layers in ZnO crystals with sheet charge densities of about 3–5×10{sup 13} cm{sup −2}.
Authors:
 [1] ; ;  [2] ;  [1] ;  [3]
  1. Institute for Superconductors, Oxides and Innovative Materials, National Research Council (CNR-SPIN), U.O.S. Napoli, Via Cintia, I-80126 Napoli (Italy)
  2. Physics Department, University of Naples “Federico II,” Via Cintia I-80126 Napoli (Italy)
  3. (Italy)
Publication Date:
OSTI Identifier:
22217751
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; CARRIER DENSITY; CARRIERS; CHARGE DENSITY; CONCENTRATION RATIO; EXCITATION; HOLES; MASS; MONOCRYSTALS; PHOTOLUMINESCENCE; RECOMBINATION; SEMICONDUCTOR MATERIALS; SURFACES; TIME RESOLUTION; ZINC OXIDES