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Title: Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.
Authors:
; ; ; ;  [1] ; ;  [2] ;  [3]
  1. ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain)
  2. CRHEA-CNRS, 06560 Valbonne (France)
  3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
Publication Date:
OSTI Identifier:
22217749
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; CRYSTALLOGRAPHY; FABRICATION; GALLIUM NITRIDES; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; STACKING FAULTS; STRAINS