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Title: An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150 K

We demonstrate electrically pumped single photon emission up to 150 K from a single InGaN quantum dot embedded in a GaN nanowire junction diode. The InGaN dot-in-nanowire p-n junctions were grown on silicon by molecular beam epitaxy. The exciton electroluminescence from individual dot-in-nanowires is in the green spectral range (λ ∼ 520 nm) and is detectable up to 150 K. Second order autocorrelation measurements performed at the exciton energy at an ambient temperature of 125 K show a background corrected g{sup (2)}(0) equal to 0.35, indicating dominant single photon emission. The steady state nanowire temperature under these conditions is estimated to be 150 K due to Joule heating induced by the large nanowire series resistance. Time resolved photoluminescence measurements yield an exciton radiative lifetime of 1.1 ns.
Authors:
;  [1]
  1. Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)
Publication Date:
OSTI Identifier:
22217748
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; AMBIENT TEMPERATURE; ELECTROLUMINESCENCE; EXCITONS; FABRICATION; GALLIUM NITRIDES; INDIUM COMPOUNDS; JOULE HEATING; JUNCTION DIODES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTONS; P-N JUNCTIONS; PUMPS; QUANTUM DOTS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; STEADY-STATE CONDITIONS; TIME RESOLUTION