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Title: A geometrical model for the description of the AlN shell morphology in GaN-AlN core-shell nanowires

A geometrical model based on the one formulated by Foxon et al.[J. Cryst. Growth 311, 3423 (2009)] is developed to describe the morphology of AlN shells in GaN-AlN core-shell nanowires grown by plasma-assisted molecular beam epitaxy. The shell aspect ratio is studied as a function of the atomic beam flux incidence angles and of the ratio between Al and N species. The comparison between experimental data and the developed geometrical model suggests the diffusion of about 55% of Al atoms from the side walls to the top surface.
Authors:
;  [1]
  1. CEA-CNRS Group Nanophysique et Semiconducteurs, Institut Néel/CNRS-Université J. Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38 054 Grenoble (France)
Publication Date:
OSTI Identifier:
22217726
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM NITRIDES; ASPECT RATIO; COMPARATIVE EVALUATIONS; FABRICATION; GALLIUM NITRIDES; INCIDENCE ANGLE; MOLECULAR BEAM EPITAXY; PLASMA; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SURFACES