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Title: Effect of Sb incorporation on structure and magnetic properties of quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) thin films

GaAs-based quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) has been successfully prepared by molecular-beam epitaxy. High-resolution x-ray diffraction measurements indicate that the lattice constant has a notable alteration with changing Sb content. Magnetic measurements demonstrate the same evolution of the Curie temperature T{sub C} and the effective Mn content x{sub eff} with increasing Sb content. The incorporation of low Sb content is of benefit to increasing x{sub eff}, thus, increasing T{sub C}. However, higher Sb content degrades the crystal quality, resulting in a decrease of x{sub eff}. Experimental results show that T{sub C} is proportional to the product of x{sub eff} and p{sup 1/3}, which is consistent with the Zener Model. The exchange energy N{sub 0}β is calculated to be −1.09 eV, which is similar to that of (Ga, Mn)As.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Mathematics and Physics Department, North China Electric Power University, Beijing 102206 (China)
  2. Institute of Semiconductors, State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22217725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALS; CURIE POINT; FERROMAGNETIC MATERIALS; GALLIUM ARSENIDES; LATTICE PARAMETERS; MAGNETIC PROPERTIES; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; THIN FILMS; X-RAY DIFFRACTION