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Title: Erratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. 103, 032102 (2013)]

No abstract prepared.
Authors:
; ; ; ; ;  [1]
  1. CNRS-CRHEA, Rue Bernard Grégory, F-06560 Valbonne (France)
Publication Date:
OSTI Identifier:
22217718
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; CONCENTRATION RATIO; ECOLOGICAL CONCENTRATION; GALLIUM NITRIDES; IONIZATION POTENTIAL; LAYERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS