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Title: Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study

By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO{sub 3}) layer. After doping, both the hole and electron mobility of CVD graphene are nearly retained, resulting in significant enhancement of graphene conductivity. With coating of 10 nm MoO{sub 3}, the conductivity of CVD graphene can be increased by about 7 times, showing promising application for graphene based electronics and transparent, conducting, and flexible electrodes.
Authors:
 [1] ;  [2] ; ;  [3] ; ;  [1] ;  [3] ;  [2]
  1. Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China)
  2. (Singapore)
  3. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)
Publication Date:
OSTI Identifier:
22217716
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GRAPHENE; HOLE MOBILITY; HOLES; LAYERS; MOLECULAR BEAM EPITAXY; MOLYBDENUM OXIDES; SURFACES