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Title: Irradiation-induced magnetic ordering in SiC: Experimental results and a density functional study

Magnetism of 6H-SiC single crystals implanted with 3 MeV protons is studied both experimentally and theoretically. We found that proton irradiation can induce stable ferromagnetism in 6H-SiC with a Curie temperature above 300 K. There is a dose window available for tuning the magnetization of the samples. The maximum saturation magnetizations (0.17 emu/g) are three orders of magnitude larger than that reported in neutron-irradiated SiC crystals (1 × 10{sup −4} emu/g). First-principles calculations indicate that the ferromagnetism is related to the divacancy-related defects (V{sub Si}V{sub C} + nH, (n = 1–3)) generated under proton irradiation. This offers a promising route for the development of metal-free SiC magnets.
Authors:
;  [1] ;  [2] ; ; ;  [1] ; ; ; ;  [3]
  1. School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, Shandong (China)
  2. (China)
  3. Key Laboratory of Nuclear Radiation and Nuclear Energy Technology, Chinese Academy of Sciences, Shanghai 201800 (China)
Publication Date:
OSTI Identifier:
22217714
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DENSITY FUNCTIONAL METHOD; DOSES; FERROMAGNETIC MATERIALS; FERROMAGNETISM; IRRADIATION; MAGNETIZATION; MAGNETS; METALS; MEV RANGE 01-10; MONOCRYSTALS; NEUTRONS; PROTONS; SATURATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; VACANCIES