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Title: Irradiation-induced magnetic ordering in SiC: Experimental results and a density functional study

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4860957· OSTI ID:22217714
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  1. School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, Shandong (China)
  2. Key Laboratory of Nuclear Radiation and Nuclear Energy Technology, Chinese Academy of Sciences, Shanghai 201800 (China)

Magnetism of 6H-SiC single crystals implanted with 3 MeV protons is studied both experimentally and theoretically. We found that proton irradiation can induce stable ferromagnetism in 6H-SiC with a Curie temperature above 300 K. There is a dose window available for tuning the magnetization of the samples. The maximum saturation magnetizations (0.17 emu/g) are three orders of magnitude larger than that reported in neutron-irradiated SiC crystals (1 × 10{sup −4} emu/g). First-principles calculations indicate that the ferromagnetism is related to the divacancy-related defects (V{sub Si}V{sub C} + nH, (n = 1–3)) generated under proton irradiation. This offers a promising route for the development of metal-free SiC magnets.

OSTI ID:
22217714
Journal Information:
Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English