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Title: Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing.
Authors:
; ; ; ;  [1] ;  [2] ;  [3] ; ;  [4]
  1. L-NESS and Dip. di Scienza dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, I–20125 Milano (Italy)
  2. CNR-IMEM Institute, Parco Area delle Scienze 37/A, I–43100 Parma (Italy)
  3. CNR–IFN, L–NESS, via Anzani 42, I–22100 Como (Italy)
  4. Laboratory for Solid State Physics, ETH Zurich, Schafmattstrasse 16, CH-8093 Zurich (Switzerland)
Publication Date:
OSTI Identifier:
22217711
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ASPECT RATIO; BOWING; CRACK PROPAGATION; CRYSTALS; DIFFUSION; DIFFUSION LENGTH; FILMS; GALLIUM ARSENIDES; INTEGRATED CIRCUITS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SILICON; STRAINS; SUBSTRATES; SURFACES; THERMAL EXPANSION