Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

Journal Article · Mon Dec 23 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4857835· OSTI ID:22217711

Bietti, Sergio; Scaccabarozzi, Andrea; Bonera, Emiliano; Miglio, Leo; Sanguinetti, Stefano ^[1]; Frigeri, Cesare ^[2]; Bollani, Monica ^[3]; Falub, Claudiu V.; Känel, Hans von ^[4]

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1. L-NESS and Dip. di Scienza dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, I–20125 Milano (Italy)
2. CNR-IMEM Institute, Parco Area delle Scienze 37/A, I–43100 Parma (Italy)
3. CNR–IFN, L–NESS, via Anzani 42, I–22100 Como (Italy)
4. Laboratory for Solid State Physics, ETH Zurich, Schafmattstrasse 16, CH-8093 Zurich (Switzerland)

Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing.

• OSTI ID: 22217711
• Journal Information: Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASPECT RATIO
BOWING
CRACK PROPAGATION
CRYSTALS
DIFFUSION
DIFFUSION LENGTH
FILMS
GALLIUM ARSENIDES
INTEGRATED CIRCUITS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SILICON
STRAINS
SUBSTRATES
SURFACES
THERMAL EXPANSION