Built-in electric field in ZnO based semipolar quantum wells grown on (1012) ZnO substrates

Journal Article · Mon Dec 23 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4851116· OSTI ID:22217710

Chauveau, J. -M.; Xia, Y.; Roland, B.; Vinter, B. ^[1]; Ben Taazaet-Belgacem, I.; Teisseire, M.; Nemoz, M.; Brault, J.; Damilano, B.; Leroux, M. ^[1]

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1. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France)

We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy on (1012) R-plane ZnO substrates. We demonstrate that atomically flat interfaces can be achieved with fully relaxed quantum wells because the mismatch between (Zn,Mg)O and ZnO is minimal for this growth orientation. The photoluminescence properties evidence a quantum confined Stark effect with an internal electric field estimated to 430 kV/cm for a 17% Mg content in the barriers. The quantum well emission is strongly polarized along the 1210 direction and a comparison with the semipolar bulk ZnO luminescence polarization points to the effect of the confinement.

• OSTI ID: 22217710
• Journal Information: Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
ELECTRIC FIELDS
MAGNESIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
STARK EFFECT
SUBSTRATES
ZINC OXIDES