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Title: Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation

Abstract

Graphical abstract: Display Omitted Highlight: ► Nickel silicides nanowire arrays prepared by a simple in situ silicidation method. ► Phases of nickel silicides could be varied by tuning the reaction temperature. ► A growth model was proposed for the nickel silicides nanowires. ► Diffusion rates of Ni and Si play a critical role for the phase variation. -- Abstract: In this paper, we report an in situ silicidizing method to prepare nickel silicide nanowire arrays with varied structures and phases. The in situ reaction (silicidation) between Si and NiCl{sub 2} led to conversion of Si nanowires to nickel silicide nanowires. Structures and phases of the obtained nickel silicides could be varied by changing the reaction temperature. At a relatively lower temperature of 700 °C, the products are Si/NiSi core/shell nanowires or NiSi nanowires, depending on the concentration of NiCl{sub 2} solution. At a higher temperature (800 °C and 900 °C), other phases of the nickel silicides, including Ni{sub 2}Si, Ni{sub 31}Si{sub 12}, and NiSi{sub 2}, were obtained. It is proposed that the different diffusion rates of Ni and Si atoms at different temperatures played a critical role in the formation of nickel silicide nanowires with different phases.

Authors:
 [1];  [1];  [1];  [1]
  1. Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
22215644
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 12; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL STRUCTURE; DIFFUSION; NICKEL CHLORIDES; NICKEL SILICIDES; QUANTUM WIRES; TEMPERATURE DEPENDENCE

Citation Formats

Liu, Hailong, She, Guangwei, Mu, Lixuan, and Shi, Wensheng. Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.08.042.
Liu, Hailong, She, Guangwei, Mu, Lixuan, & Shi, Wensheng. Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation. United States. https://doi.org/10.1016/J.MATERRESBULL.2012.08.042
Liu, Hailong, She, Guangwei, Mu, Lixuan, and Shi, Wensheng. 2012. "Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation". United States. https://doi.org/10.1016/J.MATERRESBULL.2012.08.042.
@article{osti_22215644,
title = {Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation},
author = {Liu, Hailong and She, Guangwei and Mu, Lixuan and Shi, Wensheng},
abstractNote = {Graphical abstract: Display Omitted Highlight: ► Nickel silicides nanowire arrays prepared by a simple in situ silicidation method. ► Phases of nickel silicides could be varied by tuning the reaction temperature. ► A growth model was proposed for the nickel silicides nanowires. ► Diffusion rates of Ni and Si play a critical role for the phase variation. -- Abstract: In this paper, we report an in situ silicidizing method to prepare nickel silicide nanowire arrays with varied structures and phases. The in situ reaction (silicidation) between Si and NiCl{sub 2} led to conversion of Si nanowires to nickel silicide nanowires. Structures and phases of the obtained nickel silicides could be varied by changing the reaction temperature. At a relatively lower temperature of 700 °C, the products are Si/NiSi core/shell nanowires or NiSi nanowires, depending on the concentration of NiCl{sub 2} solution. At a higher temperature (800 °C and 900 °C), other phases of the nickel silicides, including Ni{sub 2}Si, Ni{sub 31}Si{sub 12}, and NiSi{sub 2}, were obtained. It is proposed that the different diffusion rates of Ni and Si atoms at different temperatures played a critical role in the formation of nickel silicide nanowires with different phases.},
doi = {10.1016/J.MATERRESBULL.2012.08.042},
url = {https://www.osti.gov/biblio/22215644}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 12,
volume = 47,
place = {United States},
year = {Sat Dec 15 00:00:00 EST 2012},
month = {Sat Dec 15 00:00:00 EST 2012}
}