Structure and scintillation yield of Ce-doped Al–Ga substituted yttrium garnet
- Institute for Scintillation Material NAS of Ukraine, 60 Lenin Ave., 61001 Kharkiv (Ukraine)
- LPCML, CNRS, Université de Lyon 1, 69622 Villeurbanne Cedex (France)
- SSI “Institute for Single Crystals” NAS of Ukraine, 60 Lenin Ave., 61001 Kharkiv (Ukraine)
Highlights: ► Range of Y{sub 3}(Al{sub 1−x}Ga{sub x}){sub 5}O{sub 12}:Ce solid solution crystals are grown from melt by the Czochralski method. ► Light yield of mixed crystals reaches 130% of the YAG:Ce value at x ∼ 0.4. ► ∼1% of antisite defects is formed in YGG:Ce, but no evidence of this is obtained for the rest of crystals. -- Abstract: Structure and scintillation yield of Y{sub 3}(Al{sub 1−x}Ga{sub x}){sub 5}O{sub 12}:Ce solid solution crystals are studied. Crystals are grown from melt by the Czochralski method. Distribution of host cations in crystal lattice is determined. Quantity of antisite defects in crystals is evaluated using XRD and atomic emission spectroscopy data. Trend of light output at Al/Ga substitution in Y{sub 3}(Al{sub 1−x}Ga{sub x}){sub 5}O{sub 12}:Ce is determined for the first time. Light output in mixed crystals reaches 130% comparative to Ce-doped yttrium–aluminum garnet. Luminescence properties at Al/Ga substitution are evaluated.
- OSTI ID:
- 22215558
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 11; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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