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Title: Crystal growth and photoluminescence characteristics of Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} thin films grown by pulsed laser deposition

Abstract

Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films were deposited on Al{sub 2}O{sub 3} (0 0 0 1) substrates by pulsed laser deposition. The films were grown at various oxygen pressures ranging from 100 to 400 mTorr. The crystallinity and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. XRD and AFM respectively showed that the Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films had a zircon structure and consisted of homogeneous grains ranging from 100 to 400 nm depending on the deposition conditions. The radiation emitted was dominated by a red emission peak at 620 nm. The maximum PL intensity of the Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films grown at 300 mTorr was increased by a factor of 1.3 compared to that of Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films grown at 100 mTorr. The crystallinity, surface roughness and photoluminescence of the thin-film phosphors were strongly dependent on the deposition conditions, in particular, the oxygen partial pressure.

Authors:
; ;  [1]
  1. Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22215513
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 10; Conference: IFFM2011: 2011 international forum on functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011, AFM-2: 2. special symposium on advances in functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DEPOSITS; ENERGY BEAM DEPOSITION; EUROPIUM IONS; LASER RADIATION; LASERS; OPTICAL PROPERTIES; PARTIAL PRESSURE; PHOSPHORS; PHOTOLUMINESCENCE; PULSED IRRADIATION; SUBSTRATES; SURFACES; THIN FILMS; X-RAY DIFFRACTION; ZIRCON

Citation Formats

Yang, Hyun Kyoung, Moon, Byung Kee, Choi, Byung Chun, Jeong, Jung Hyun, E-mail: jhjeong@pknu.ac.kr, and Kim, Kwang Ho, E-mail: kwhokim@pusan.ac.kr. Crystal growth and photoluminescence characteristics of Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} thin films grown by pulsed laser deposition. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.04.048.
Yang, Hyun Kyoung, Moon, Byung Kee, Choi, Byung Chun, Jeong, Jung Hyun, E-mail: jhjeong@pknu.ac.kr, & Kim, Kwang Ho, E-mail: kwhokim@pusan.ac.kr. Crystal growth and photoluminescence characteristics of Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} thin films grown by pulsed laser deposition. United States. https://doi.org/10.1016/J.MATERRESBULL.2012.04.048
Yang, Hyun Kyoung, Moon, Byung Kee, Choi, Byung Chun, Jeong, Jung Hyun, E-mail: jhjeong@pknu.ac.kr, and Kim, Kwang Ho, E-mail: kwhokim@pusan.ac.kr. 2012. "Crystal growth and photoluminescence characteristics of Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} thin films grown by pulsed laser deposition". United States. https://doi.org/10.1016/J.MATERRESBULL.2012.04.048.
@article{osti_22215513,
title = {Crystal growth and photoluminescence characteristics of Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} thin films grown by pulsed laser deposition},
author = {Yang, Hyun Kyoung and Moon, Byung Kee and Choi, Byung Chun and Jeong, Jung Hyun, E-mail: jhjeong@pknu.ac.kr and Kim, Kwang Ho, E-mail: kwhokim@pusan.ac.kr},
abstractNote = {Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films were deposited on Al{sub 2}O{sub 3} (0 0 0 1) substrates by pulsed laser deposition. The films were grown at various oxygen pressures ranging from 100 to 400 mTorr. The crystallinity and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. XRD and AFM respectively showed that the Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films had a zircon structure and consisted of homogeneous grains ranging from 100 to 400 nm depending on the deposition conditions. The radiation emitted was dominated by a red emission peak at 620 nm. The maximum PL intensity of the Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films grown at 300 mTorr was increased by a factor of 1.3 compared to that of Ca{sub 2}MgSi{sub 2}O{sub 7}:Eu{sup 3+} films grown at 100 mTorr. The crystallinity, surface roughness and photoluminescence of the thin-film phosphors were strongly dependent on the deposition conditions, in particular, the oxygen partial pressure.},
doi = {10.1016/J.MATERRESBULL.2012.04.048},
url = {https://www.osti.gov/biblio/22215513}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 10,
volume = 47,
place = {United States},
year = {Mon Oct 15 00:00:00 EDT 2012},
month = {Mon Oct 15 00:00:00 EDT 2012}
}