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Title: Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility ({mu}) on the initial dark resistivity is experimentally investigated at 77 K ({rho}d{sub 0}), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences {mu}(T), {mu}({rho}d{sub 0}), and {mu}(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.
Authors:
 [1] ;  [2] ; ;  [1]
  1. Baku State University (Azerbaijan)
  2. Azerbaijan State Economic University (Azerbaijan)
Publication Date:
OSTI Identifier:
22210588
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 8; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CHARGE CARRIERS; CRYSTALS; DYSPROSIUM; FREE ENERGY; GADOLINIUM; HOLMIUM; INDIUM; INDIUM SELENIDES; MOBILITY; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE