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Title: Electrical phenomena in a metal/nanooxide/p{sup +}-silicon structure during its transformation to a resonant-tunneling diode

To investigate and develop novel silicon-based electronic components, the electro-physical effects in a metal-insulator-semiconductor (MIS) structure with nanometer size parameters, gained by enhancement of the silicon doping level up to N{sub A} {approx} 10{sup 19} cm{sup -3} and reduction of the oxide thickness down to 0.4-4.0 nm, have been studied. As a result of such changes, the MIS nanostructure satisfies necessary and sufficient conditions for the electron resonant tunneling that can be observed at relatively low (some volts) reverse biases. Thereby a MIS capacitor can be transformed into a resonant-tunneling diode with substantial extension of its properties and functions.
Authors:
 [1] ;  [2]
  1. Saint Petersburg State University, Faculty of Physics (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22210580
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 8; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SILICON; THICKNESS; TUNNEL DIODES; TUNNEL EFFECT