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Title: Features of defect formation during the growth of double heterostructures for injection lasers based on Al{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y}/GaSb materials

A lack of lattice defects and, in particular, a lack of dislocations in the active layer in complex multilayer heteroepitaxial systems is the basic condition for the efficient and reliable operation of optoelectronic microdevices. Minimum elastic stresses in multilayer heteroepitaxial systems and their lack in the active layer at that elevated temperature that occurs in an efficiently operating electronic device is the second necessary condition for its long-term operation.
Authors:
 [1]
  1. Russian Academy of Sciences, Institute of Radio Engineering and Electronics (Fryazino Branch) (Russian Federation)
Publication Date:
OSTI Identifier:
22210578
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 8; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DISLOCATIONS; ELECTRONIC EQUIPMENT; GALLIUM ANTIMONIDES; LASERS; LAYERS; STRESSES