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Title: Effect of annealing in argon on the properties of thermally deposited gallium-oxide films

The effect of the annealing temperature on the I-V, C-I, and G-V characteristics and transparency of gallium-oxide films is investigated. The films are fabricated by the thermal evaporation of Ga{sub 2}O{sub 3} powder on n-GaAs wafers. It is shown that the films which are amorphous after deposition crystallize upon annealing at temperatures T{sub an} {>=} 800 Degree-Sign C. The electrical characteristics and photoresponse of the V/Ni-GaAs-GaAs-Ga{sub x}O{sub y}-V/Ni samples to visible radiation depend on the structure and phase composition of the films.
Authors:
; ; ; ; ; ; ; ;  [1]
  1. Tomsk State University, Siberian Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22210575
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 8; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; DEPOSITS; EVAPORATION; FILMS; GALLIUM ARSENIDES; GALLIUM OXIDES; POWDERS