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Title: Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures

The longitudinal {rho}{sub xx}(B) and Hall {rho}{sub xy}(B) magnetoresistances are investigated experimentally in the integer quantum Hall effect (QHE) regime in n-InGaAs/GaAs double quantum well nanostructures in the range of magnetic fields B = (0-16) T and temperatures T = (0.05-70) K before and after IR illumination. The results are evaluated within the scaling hypothesis with regard to electron-electron interaction.
Authors:
; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22210573
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Experimental and Theoretical Physics; Journal Volume: 117; Journal Issue: 1; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ELECTRON-ELECTRON COLLISIONS; ELECTRON-ELECTRON COUPLING; ELECTRON-ELECTRON INTERACTIONS; GALLIUM ARSENIDES; HALL EFFECT; INDIUM ARSENIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; QUANTUM WELLS; SCALING