Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures

Journal Article · Mon Jul 15 00:00:00 EDT 2013 · Journal of Experimental and Theoretical Physics

DOI:https://doi.org/10.1134/S1063776113080116· OSTI ID:22210573

Arapov, Yu. G.; Gudina, S. V.; Klepikova, A. S.; Novokshonov, S. G.; Kharus, G. I.; Shelushinina, N. G.; Yakunin, M. V. ^[1]

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1. Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)

The longitudinal {rho}{sub xx}(B) and Hall {rho}{sub xy}(B) magnetoresistances are investigated experimentally in the integer quantum Hall effect (QHE) regime in n-InGaAs/GaAs double quantum well nanostructures in the range of magnetic fields B = (0-16) T and temperatures T = (0.05-70) K before and after IR illumination. The results are evaluated within the scaling hypothesis with regard to electron-electron interaction.

• OSTI ID: 22210573
• Journal Information: Journal of Experimental and Theoretical Physics, Vol. 117, Issue 1; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ELECTRON-ELECTRON COLLISIONS
ELECTRON-ELECTRON COUPLING
ELECTRON-ELECTRON INTERACTIONS
GALLIUM ARSENIDES
HALL EFFECT
INDIUM ARSENIDES
MAGNETIC FIELDS
MAGNETORESISTANCE
QUANTUM WELLS
SCALING