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Title: Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths

A series of AlGaAs/InGaAs/AlGaAs quantum-well heterostructures with different quantum-well depths and approximately the same concentrations of two-dimensional electrons is grown by molecular-beam epitaxy. The built-in electric field in the grown samples is determined from the photoreflectance data and, on this basis, the energy-band structure in the quantum-well region is calculated. It is found that the highest mobility {mu}{sub e} of two-dimensional electrons is attained in the sample with a barrier-layer thickness of L{sub b} = 11 nm. Measurements of the photoluminescence spectra and the band-structure calculations demonstrate that, as the quantum well becomes closer to the surface, the doping profile broadens due to diffusion and segregation processes. The nonmonotonic dependence of {mu}{sub e} on the distance between the surface and the quantum well is explained.
Authors:
; ; ;  [1] ;  [2] ; ; ; ;  [3] ;  [1]
  1. Russian Academy of Sciences, Institute of Microwave Semiconductor Electronics (Russian Federation)
  2. National Research Nuclear University MEPhI (Russian Federation)
  3. Moscow State University, Faculty of Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22210543
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 9; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; ELECTRIC FIELDS; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; SURFACES; THICKNESS